1. I-Solvothermal synthesis
1. Ekrwadaumlinganiselo wezinto eziphathekayo...
I-zinc powder kunye ne-selenium powder zixutywe kwi-1: 1 ye-molar ratio, kunye namanzi adibeneyo okanye i-ethylene glycol yongezwa njenge-solvent medium 35..
2 .Iimeko zokusabela
o Ubushushu bokusabela: 180-220°C
o Ixesha lokuphendula: 12-24 iiyure
o Uxinzelelo: Gcina uxinzelelo oluzenzele lona kwiketile yokusabela evaliweyo
Ukudibanisa ngokuthe ngqo kwe-zinc kunye ne-selenium kuququzelelwa ngokufudumeza ukuvelisa i-nanoscale zinc selenide crystals 35.
3.Inkqubo yasemva konyango...
Emva kokusabela, i-centrifuged, ihlanjwe nge-ammonia edibeneyo (80 ° C), i-methanol, kunye ne-vacuum yomisiwe (120 ° C, P₂O₅).btainumgubo > 99.9% ubunyulu 13.
2. Indlela yokubeka umphunga wekhemikhali
1.Unyango lwangaphambili lwempahla ekrwada
o Ukucoceka kwezinto eziluhlaza ze-zinc ≥ 99.99% kwaye ifakwe kwi-graphite crucible
o Irhasi yeHydrogen selenide ithuthwa ngerhasi yeargon6.
2 .Ulawulo lobushushu
o Indawo yokuphuphuma kweZinc: 850-900°C
o Indawo yokubeka: 450-500°C
Ukubekelwa umkhomba-ndlela womphunga we-zinc kunye ne-hydrogen selenide ngeqondo lobushushu 6.
3 .Iiparamitha zegesi
o Ukuhamba kweArgon: 5-10 L / min
o Uxinzelelo oluyinxenye lwehydrogen selenide:0.1-0.3 atm
Amazinga e-Deposition angafikelela kwi-0.5-1.2 mm / h, okukhokelela ekubunjweni kwe-60-100 mm ye-polycrystalline zinc selenide 6..
3. Indlela yokudibanisa yesigaba esiqinileyo
1. Ekrwadaukuphatha izinto...
Isisombululo se-zinc chloride saphendulwa kunye nesisombululo se-oxalic acid ukwenza i-zinc oxalate precipitate, eyomisiwe kwaye ixutywe kunye ne-selenium powder kwi-1: 1.05 molar 4.
2 .Iiparamitha zokusabela kwe-Thermal
o Vacuum ityhubhu iqondo lobushushu: 600-650°C
o Gcina ixesha lishushu: 4-6 iiyure
I-Zinc selenide powder kunye nobukhulu be-particle ye-2-10 μm iveliswa yi-slid-phase diffusion reaction 4..
Ukuthelekiswa kweenkqubo eziphambili
| indlela | Ubume bemveliso | Ubungakanani besuntswana/ubukhulu | Ubukhazikhazi | Iinkalo zesicelo |
| Indlela yeSolvothermal 35 | Iibhola zeeNano / iintonga | 20-100 nm | Cubic sphalerite | Izixhobo ze-Optoelectronic |
| Ukufakwa komphunga 6 | Iibhloko zePolycrystalline | 60-100 mm | Ubume beHexagonal | I-infrared optics |
| Indlela yenqanaba eliqinileyo 4 | Ii powders ezinobungakanani beMicron | 2-10 μm | Isigaba seCubic | Izandulela zemathiriyeli ye-infrared |
Amanqaku aphambili olawulo lwenkqubo ekhethekileyo: indlela ye-solvothermal idinga ukongeza i-surfactants efana ne-oleic acid ukulawula i-morphology 5, kunye ne-vapor deposition ifuna ukuba i-substrate roughness ibe yi-< Ra20 ukuqinisekisa ukufana kwe-deposition 6.
1. Ukubekwa komphunga ngokwasemzimbeni (PVD).
1Indlela yeTekhnoloji
o Zinc selenide imathiriyeli ekrwada yenziwa umphunga kwindawo efunxayo ize ifakwe kumphezulu wesubstrate kusetyenziswa itekhnoloji yokusputtering okanye i-thermal evaporation12.
o Imithombo yokuguquka kwe-zinc kunye neselenium ifudunyezwa kwii-gradients zobushushu ezahlukeneyo (indawo yokuphuphuma kwe-zinc: 800–850 °C, indawo yokumka kwe-selenium: 450–500 °C), kwaye umlinganiselo we-stoichiometric ulawulwa ngokulawula izinga lokuphuma kwamanzi....12
2 .Ulawulo lweParameter
o Vacuum: ≤1×10⁻³ Pa
o Ubushushu beBasal: 200–400°C
o Izinga lokubekwa:0.2–1.0 nm/s
Iifilimu ze-Zinc selenide ezinobunzima be-50-500 nm zingalungiselelwa ukusetyenziswa kwi-infrared optics 25.
2. Indlela yokugaya ibhola yoomatshini
1.Ukuphathwa kwempahla ekrwada
o I-zinc powder (ubunyulu≥99.9%) ixutywe kunye ne-selenium powder kwi-1: 1 ye-molar ratio kwaye ilayishwe kwi-stainless steel ball mill jar 23.
2 .Iiparamitha zenkqubo
o Ixesha lokusila ibhola: 10–20 iiyure
Isantya : 300-500 rpm
o Umlinganiselo wePellet: 10:1 (i-zirconia yokusila iibhola).
I-Zinc selenide nanoparticles ene-particle size ye-50-200 nm yenziwe yi-mechanical alloying reactions, kunye nokuhlanjululwa kwe> 99% 23.
3. Indlela yokucofa ngokucofa okutshisayo
1Ukulungiselela kwangaphambili
o I-Zinc selenide nanopowder (ubungakanani besuntswana <100 nm) idityaniswe yindlela ye-solvothermal njengento ekrwada 4.
2 .Iiparamitha zeSintering
o Ubushushu: 800–1000°C
o Uxinzelelo: 30–50 MPa
o Zigcine ushushu: iiyure ezi-2–4
Imveliso inoxinano lwe> 98% kwaye inokucutshungulwa ibe yifomati enkulu yamacandelo okukhanya afana neefestile ze-infrared okanye iilensi ezingama-45..
4. I-molecular beam epitaxy (MBE).
1.Ubume be-vacuum ephezulu kakhulu
o Vacuum: ≤1×10⁻⁷ Pa
o Izinki kunye nemitha yemolekyuli yeselenium ilawula ngokuchanekileyo ukuhamba kumthombo we-electron beam emphunga6.
2.Imilinganiselo yokukhula
o Isiseko sobushushu: 300–500°C (i-GaAs okanye i-sapphire substrates zisetyenziswa ngokuqhelekileyo).
o Izinga lokukhula:0.1–0.5 nm/s
Iifilimu ezicekethekileyo ze-crystal zinc selenide zinokulungiswa kuluhlu lobuninzi be-0.1-5 μm kwizixhobo ezichanekileyo ze-optoelectronic ezichanekileyo56.
Ixesha lokuposa: Apr-23-2025