1. Ukwenziwa kweSolvothermal
1. Ikrwadaumlinganiselo wezinto eziphathekayo
Umgubo weZinc kunye nomgubo weSelenium zixutywa kwi-1:1 molar ratio, kwaye amanzi anyibilikisiweyo okanye i-ethylene glycol yongezwa njenge-solvent medium 35.
2.Iimeko zokusabela
o Ubushushu bokusabela: 180-220°C
o Ixesha lokuphendula: iiyure ezili-12-24
o Uxinzelelo: Gcina uxinzelelo oluzivelelayo kwisitya sokusabela esivaliweyo
Ukudibana ngqo kwe-zinc kunye ne-selenium kwenziwa lula kukufudumeza ukuvelisa iikristale ze-zinc selenide ze-nanoscale 35.
3.Inkqubo yasemva konyango
Emva kwempendulo, yafakwa kwi-centrifuge, yahlanjwa nge-ammonia enyibilikisiweyo (80 °C), i-methanol, yaza yomiswa nge-vacuum (120 °C, P₂O₅).i-btainumgubo > 99.9% ubumsulwa 13.
2. Indlela yokubeka umphunga weekhemikhali
1.Unyango lwangaphambi kokusetyenziswa kwezinto eziluhlaza
o Ubumsulwa bezinto eziluhlaza ze-zinc yi-≥ 99.99% kwaye zibekwe kwisiqhoboshi segrafiti
o Igesi yeHydrogen selenide ithuthwa yi-argon gas carry6.
2.Ulawulo lobushushu
o Indawo yokufuma kweZinc: 850-900°C
o Indawo yokubeka: 450-500°C
Ukufakwa komphunga we-zinc kunye ne-hydrogen selenide kwicala elichanekileyo ngokwe-gradient yobushushu 6.
3.Iiparameter zegesi
o Ukuhamba kwe-Argon: 5-10 L/min
o Uxinzelelo oluncinci lwe-hydrogen selenide:0.1-0.3 atm
Amanqanaba okufakwa kwe-oksijini angafikelela kwi-0.5-1.2 mm/h, nto leyo ekhokelela ekudalweni kwe-polycrystalline zinc selenide eyi-60-100 mm ubukhulu..
3. Indlela yokwenziwa ngokuthe ngqo kwesigaba esiqinileyo
1. Ikrwadaukuphathwa kwezinto
Isisombululo se-zinc chloride saxutywa nesisombululo se-oxalic acid ukuze kwenziwe i-zinc oxalate precipitate, eyamiswa yaza yagaywa yaza yaxutywa ne-selenium powder ngomlinganiselo we-1:1.05 molar 4..
2.Iiparamitha zokusabela kobushushu
o Ubushushu besithando somlilo setyhubhu yokucoca umoya: 600-650°C
o Gcina ixesha lifudumele: iiyure ezi-4-6
Umgubo we-zinc selenide onobukhulu be-particle obuyi-2-10 μm uveliswa yi-solid-phase diffusion reaction 4.
Uthelekiso lweenkqubo eziphambili
| indlela | Inkcazo-mhlaba yemveliso | Ubungakanani besuntswana/ubukhulu | Ubukristali | Iindawo zokufaka isicelo |
| Indlela ye-Solvothermal 35 | Iibhola zeNano/iintonga | 20-100 nm | I-Cubic sphalerite | Izixhobo ze-Optoelectronic |
| Ukufakwa komphunga 6 | Iibhloko zePolycrystalline | 60-100 mm | Ulwakhiwo olunesiqingatha | I-infrared optics |
| Indlela yesigaba esiqinileyo 4 | Iipowders ezinobukhulu be-micron | 2-10 μm | Isigaba seCubic | Izinto ezisetyenziswa kwi-infrared precursors |
Amanqaku aphambili olawulo lwenkqubo ekhethekileyo: indlela ye-solvothermal kufuneka yongeze ii-surfactants ezifana ne-oleic acid ukulawula imo ye-5, kwaye ukufakwa komphunga kufuna ukuba i-substrate ibe rhabaxa < Ra20 ukuqinisekisa ukufana kokufakwa 6.
1. Ukufakwa komphunga ngokwasemzimbeni (I-PVD).
1.Indlela yeTekhnoloji
o Izinto eziluhlaza zeZinc selenide ziyafuthwa zifakwe umphunga kwindawo engenamoya zize zibekwe phezu komphezulu we-substrate kusetyenziswa iteknoloji yokutshiza okanye yokufuma kwe-thermal12.
o Imithombo yokufuma ye-zinc kunye ne-selenium ifudunyezwa kwii-gradients ezahlukeneyo zobushushu (indawo yokufuma ye-zinc: 800–850 °C, indawo yokufuma ye-selenium: 450–500 °C), kwaye umlinganiselo we-stoichiometric ulawulwa ngokulawula izinga lokufuma.12.
2.Ulawulo lweparameter
o I-Vacuum: ≤1×10⁻³ Pa
o Ubushushu obuphantsi: 200–400°C
o Izinga lokufaka imali:0.2–1.0 nm/s
Iifilimu ze-zinc selenide ezinobukhulu obuyi-50–500 nm zingalungiselelwa ukusetyenziswa kwi-infrared optics 25.
2Indlela yokugaya ibhola ngoomatshini
1.Ukuphathwa kwezinto eziluhlaza
o Umgubo weZinc (ubumsulwa≥99.9%) uxutywe nomgubo weselenium kwi-1:1 molar ratio kwaye ufakwe kwijagi ye-ball mill yentsimbi engagqwaliyo 23.
2.Iiparamitha zenkqubo
o Ixesha lokusila ibhola: iiyure ezili-10–20
Isantya: 300–500 rpm
o Umlinganiselo wePellet: 10:1 (iibhola zokugaya ze-zirconia).
Ii-nanoparticles ze-Zinc selenide ezinobukhulu be-particle obuyi-50–200 nm zenziwe zii-mechanical alloying reactions, ezinobumsulwa obungaphezulu kwe-99% 23.
3. Indlela yokucofa eshushu
1.Ukulungiselela kwangaphambili
o I-Zinc selenide nanopowder (ubungakanani bamasuntswana < 100 nm) eyenziwe ngendlela ye-solvothermal njengezinto eziluhlaza 4.
2.Iiparamitha zokusila
o Ubushushu: 800–1000°C
o Uxinzelelo: 30–50 MPa
o Gcina ushushu: iiyure ezi-2–4
Imveliso inobunzima obungaphezulu kwe-98% kwaye ingacutshungulwa ibe zizinto ezibonakalayo ezinkulu ezifana neefestile ze-infrared okanye iilensi 45.
4. I-epitaxy ye-molecular beam (MBE).
1.Indawo yokufunxa umoya ephezulu kakhulu
o I-Vacuum: ≤1×10⁻⁷ Pa
o Imisebe yemolekyuli ye-zinc kunye ne-selenium ilawula ngokuchanekileyo ukuhamba komthombo womphunga we-electron beam.
2.Iiparamitha zokukhula
o Ubushushu obusisiseko: 300–500°C (iiGaA okanye ii-sapphire substrates zisetyenziswa rhoqo).
o Izinga lokukhula:0.1–0.5 nm/s
Iifilimu ezincinci ze-single-crystal zinc selenide zingalungiswa kuluhlu lobukhulu obuyi-0.1–5 μm kwizixhobo ze-optoelectronic ezichanekileyo kakhulu56.
Ixesha leposi: Epreli-23-2025