1. Intshayelelo

I-Zinc telluride (ZnTe) yinto ebalulekileyo ye-II-VI yeqela le-semiconductor kunye nesakhiwo se-bandgap ngqo. Kwiqondo lobushushu begumbi, i-bandgap yayo imalunga ne-2.26eV, kwaye ifumana usetyenziso olubanzi kwizixhobo ze-optoelectronic, iiseli zelanga, i-radiation detectors, kunye nezinye iindawo. Eli nqaku liza kunika isingeniso esicacileyo kwiinkqubo ezahlukeneyo ze-synthesis ye-zinc telluride, kubandakanywa ukusabela okuqinileyo, ukuthuthwa komphunga, iindlela ezisekelwe kwisisombululo, i-molecular beam epitaxy, njl.

2. Indlela ye-Solid-State Reaction ye-ZnTe Synthesis

2.1 Umgaqo

Indlela yokuphendula ye-solid-state yeyona ndlela yendabuko yokulungiselela i-zinc telluride, apho i-zinc ecocekileyo kunye ne-tellurium isabela ngokuthe ngqo kumaqondo obushushu aphezulu ukwenza i-ZnTe:

Zn + Te → ZnTe

2.2 Inkqubo eneenkcukacha

2.2.1 ULungiselelo lweMathiriyeli ekrwada

1. Ukukhethwa kwezinto eziphathekayo: Sebenzisa iigranules ze-zinc ezicocekileyo kunye neengqungquthela ze-tellurium ngobunyulu ≥99.999% njengezinto zokuqala.
2. Unyango Lwezinto:
   • Unyango lwe-Zinc: Okokuqala ntywiliselwa kwi-dilute hydrochloric acid (5%) ngomzuzu we-1 ukususa i-oxides yomhlaba, uhlambulule ngamanzi adibeneyo, uhlambe nge-ethanol e-anhydrous, kwaye ekugqibeleni uyomise kwi-oven vacuum kwi-60 ° C kwiiyure ze-2.
   • Unyango lwe-Tellurium: Okokuqala ntywiliselwa kwi-aqua regia (HNO₃: HCl = 1: 3) imizuzwana ye-30 ukususa i-oxides yomhlaba, uhlambulule ngamanzi adibeneyo kuze kube yilapho ungathathi hlangothi, uhlambe nge-ethanol e-anhydrous, kwaye ekugqibeleni uyomise kwi-oven vacuum kwi-80 ° C ngeeyure ze-3.
3. Ubunzima: Nika umlinganiselo wemathiriyeli ekrwada ngokwe stoichiometric ratio (Zn:Te=1:1). Ukuqwalasela i-volatilization ye-zinc enokwenzeka kumaqondo aphezulu, ukugqithisa kwe-2-3% kunokongezwa.

2.2.2 Ukuxutywa kwezinto

1. Ukugaya kunye nokuxuba: Beka i-zinc enesisindo kunye ne-tellurium kwi-agate mortar kwaye ugaye imizuzu engama-30 kwibhokisi yeglavu egcwele i-argon de idibaniswe ngokufanayo.
2. I-Pelletizing: Beka umgubo oxutywe kwi-mold kwaye ucinezele kwiipellets ezinobubanzi be-10-20mm phantsi koxinzelelo lwe-10-15MPa.

2.2.3 ULungiselelo lwesitya sokusabela

1. Unyango lwe-Quartz Tube: Khetha iityhubhu zequartz ezicoceke kakhulu (i-diameter yangaphakathi eyi-20-30mm, ubukhulu bodonga yi-2-3mm), qala ucwilise kwi-aqua regia iiyure ezingama-24, uhlambulule kakuhle ngamanzi adibeneyo, kwaye uyomise kwi-oven eyi-120 ° C.
2. Ukukhutshwa: Beka iipellets zemathiriyeli ekrwada kwityhubhu yequartz, qhagamshela kwisixokelelwano sokufunxa, kwaye uphume uye ku-≤10⁻³Pa.
3. Ukutywinwa: Vala ityhubhu yequartz usebenzisa i-hydrogen-oxygen flame, uqinisekise ubude bokutywina ≥50mm ukwenzela ukuba umoya ungangeni.

2.2.4 Intshukumo yobushushu obuphezulu

1. Inqanaba Lokuqala Lokufudumala: Faka ityhubhu ye-quartz etywiniweyo kwisithando somlilo kunye nokushisa kwi-400 ° C ngesantya se-2-3 ° C / min, ubambe iiyure ze-12 ukuvumela ukusabela kokuqala phakathi kwe-zinc kunye ne-tellurium.
2. Inqanaba lesibini lokufudumala: Qhubeka ufudumeza ukuya kwi-950-1050 ° C (ngaphantsi kwendawo yokuthambisa i-quartz ye-1100 ° C) kwi-1-2 ° C / min, ubambe iiyure ezingama-24-48.
3. I-Tube Rocking: Ngexesha lobushushu obuphezulu, jikisa iziko kwi-45 ° rhoqo kwiiyure ezi-2 kwaye ushukumise amaxesha amaninzi ukuqinisekisa ukuxutywa ngokucokisekileyo kwezinto ezisabelayo.
4. Ukupholisa: Emva kokugqitywa kokusabela, zipholisa ngokukhawuleza kwiqondo lokushisa kwi-0.5-1 ° C / min ukuthintela ukuqhekeka kwesampuli ngenxa yoxinzelelo lwe-thermal.

2.2.5 Ukwenziwa kweMveliso

1. Ukususwa kweMveliso: Vula ityhubhu yequartz kwibhokisi yeglavu kwaye ususe imveliso yokusabela.
2. Ukugaya: Phinda ugaye imveliso ibe ngumgubo ukususa naziphi na izinto ezingasebenziyo.
3. I-Annealing: I-Anneal powder kwi-600 ° C phantsi kwe-argon atmosphere kwiiyure ze-8 ukukhulula uxinzelelo lwangaphakathi kunye nokuphucula i-crystallinity.
4. Uphawu: Yenza i-XRD, i-SEM, i-EDS, njl., Ukuqinisekisa ukucoceka kwesigaba kunye nokubunjwa kweekhemikhali.

2.3 Inkqubo yeParameter Optimization

1. Ulawulo lobushushu: Elona qondo lobushushu lokusabela yi-1000±20°C. Amaqondo obushushu asezantsi anokubangela ukusabela okungaphelelanga, ngelixa amaqondo obushushu aphezulu anokubangela i-zinc volatilization.
2. Ukulawula ixesha: Ixesha lokubamba kufuneka libe yi-≥24 iiyure ukuqinisekisa ukusabela okupheleleyo.
3. Izinga lokupholisa: Ukupholisa okucothayo (0.5-1 ° C / min) kuvelisa iinkozo ezinkulu zekristale.

2.4 Uhlalutyo lwezinto eziluncedo nezingeloncedo

Izinto eziluncedo:

• Inkqubo elula, iimfuno zezixhobo eziphantsi
• Ifanelekile kwimveliso yebhetshi
• Ukucoceka kwemveliso ephezulu

Izinto ezingeloncedo:

• Ubushushu obuphezulu bokusabela, ukusetyenziswa kwamandla aphezulu
• Ukuhanjiswa kobungakanani beenkozo okungafananga
• Isenokuba nezixa ezincinci zemathiriyeli engaphendulwanga

3. Indlela yoThutho loMphunga ye-ZnTe Synthesis

3.1 Umgaqo

Indlela yokuthutha umphunga isebenzisa irhasi ethwala ukuthutha imiphunga esabelayo kwindawo yobushushu obuphantsi ukuze ibekwe, iphumeze ukukhula okukwalathiso kwe-ZnTe ngokulawula ukuthambeka kobushushu. Iodine isetyenziswa ngokuqhelekileyo njengearhente yothutho:

ZnTe(s) + I₂(g) ⇌ ZnI₂(g) + 1/2Te₂(g)

3.2 Inkqubo eneenkcukacha

3.2.1 ULungiselelo lweMathiriyeli ekrwada

1. Ukukhethwa kwezinto eziphathekayo: Sebenzisa i-powder ecocekileyo ye-ZnTe (ubunyulu ≥99.999%) okanye i-stoichiometrically exutywe i-Zn kunye ne-Te powders.
2. ULungiselelo lwe-Agent yezoThutho: Iikristale ze-iodine ezicocekileyo (ubunyulu ≥99.99%), umthamo we-5-10mg / cm³ umthamo we-tube yokuphendula.
3. Unyango lwe-Quartz Tube: Kuyafana nendlela yokusabela kwimeko eqinileyo, kodwa iityhubhu ezinde zequartz (300-400mm) ziyafuneka.

3.2.2 Ukulayishwa kweThubhu

1. Ukubekwa kwezinto eziphathekayo: Beka i-ZnTe powder okanye i-Zn + Te umxube kwelinye icala lombhobho we-quartz.
2. Ukongezwa kwe-iodine: Yongeza iikristale ze-iodine kwityhubhu ye-quartz kwibhokisi yeglavu.
3. Ukufuduka: Phuma uye ≤10⁻³Pa.
4. Ukutywinwa: Vala ngedangatye le-hydrogen-oksijeni, ugcine ityhubhu ithe tyaba.

3.2.3 ULungiselelo lweGradiyenti yeqondo lobushushu

1. Ubushushu beNdawo eshushu: Misela ku-850-900°C.
2. Ubushushu beNdawo eBanda: Misela kuma-750-800°C.
3. Ubude beNdawo yeGradiyenti: Malunga ne-100-150mm.

3.2.4 Inkqubo yokuKhula

1. Inqanaba lokuqala: Ukufudumala kwi-500 ° C kwi-3 ° C / min, ubambe iiyure ze-2 ukuvumela ukusabela kokuqala phakathi kwe-iodine kunye nezinto eziluhlaza.
2. Inqanaba lesibini: Qhubeka ufudumeza kwiqondo lobushushu elibekiweyo, gcina iqondo lobushushu, kwaye ukhule kangangeentsuku ezisi-7-14.
3. Ukupholisa: Emva kokugqitywa kokukhula, pholile kwiqondo lokushisa kwi-1 ° C / min.

3.2.5 Ingqokelela yeMveliso

1. Ukuvula iityhubhu: Vula ityhubhu yequartz kwibhokisi yeglavu.
2. Ukuqokelela: Qokelela iikristale ze-ZnTe enye ekupheleni okubandayo.
3. Ukucoca: I-Ultrasonically icocekile nge-ethanol ye-anhydrous yemizuzu ye-5 ukususa i-iodine ye-adsorbed.

3.3 Amanqaku oLawulo lweNkqubo

1. Ukulawulwa kwexabiso le-Iodine: Ukugxininiswa kwe-iodine kuchaphazela izinga lokuthutha; Olona luhlu luyi-5-8mg/cm³.
2. Iqondo lobushushu: Gcina i-gradient ngaphakathi kwe-50-100 ° C.
3. Ixesha lokukhula: Ngokuqhelekileyo iintsuku ezi-7-14, kuxhomekeke kubungakanani obufunwayo bekristale.

3.4 Uhlalutyo lwezinto eziluncedo nezingeloncedo

Izinto eziluncedo:

• Iikristale ezikumgangatho ophezulu omnye zinokufumaneka
• Iisayizi ezinkulu zekristale
• Ukucoceka okuphezulu

Izinto ezingeloncedo:

• Imijikelo yokukhula emide
• Iimfuno zezixhobo eziphezulu
• Isivuno esiphantsi

4. Indlela esekelwe kwisisombululo se-ZnTe Nanomaterial Synthesis

4.1 Umgaqo

Iindlela ezisekelwe kwisisombululo zilawula ukuphendula kwangaphambili kwisisombululo sokulungiselela i-ZnTe nanoparticles okanye i-nanowires. Impendulo eqhelekileyo yile:

Zn²⁺ + HTe⁻ + OH⁻ → ZnTe + H₂O

4.2 Inkqubo eneenkcukacha

4.2.1 ULungiselelo lwe-Reagent

1. Umthombo weZinc: I-Zinc acetate (Zn(CH₃COO)₂·2H₂O), ubunyulu ≥99.99%.
2. Umthombo weTellurium: I-Tellurium dioxide (TeO₂), ubunyulu ≥99.99%.
3. I-Agent yokunciphisa: i-sodium borohydride (NaBH₄), ubunyulu ≥98%.
4. Izinyibilikisi: Amanzi adityanisiweyo, i-ethylenediamine, i-ethanol.
5. I-Surfactant: I-Cetyltrimethylammonium bromide (CTAB).

4.2.2 ULungiselelo lwe-Tellurium Precursor

1. Ukulungiswa kwesisombululo: Dissolve 0.1mmol TeO₂ kwi-20ml yamanzi adibeneyo.
2. Ukunciphisa ukusabela: Yongeza i-0.5mmol NaBH₄, ugxobhoze ngomagnetic imizuzu engama-30 ukuvelisa isisombululo se-HTe⁻.
   TeO₂ + 3BH₄⁻ + 3H₂O → HTe⁻ + 3B(OH)₃ + 3H₂↑
3. I-Atmosphere ekhuselayo: Gcina ukuhamba kwenitrogen kuyo yonke indawo ukukhusela i-oxidation.

4.2.3 I-ZnTe Nanoparticle Synthesis

1. Ukulungiswa kwesisombululo seZinc: Ukunyibilikisa i-0.1mmol zinc acetate kwi-30ml ethylenediamine.
2. Ukuxuba Ukuphendula: Kancinci yongeza isisombululo se-HTe⁻ kwisisombululo se-zinc, siphendule kwi-80 ° C kwiiyure ze-6.
3. I-Centrifugation: Emva kokusabela, i-centrifuge kwi-10,000rpm imizuzu eyi-10 ukuqokelela imveliso.
4. Ukuhlamba: Ukuhlamba okunye nge-ethanol kunye namanzi adiyoniyo kathathu.
5. Ukomisa: Vacuum yome kwi-60 ° C iiyure ezi-6.

4.2.4 I-ZnTe Nanowire Synthesis

1. Template Addition: Yongeza i-0.2g CTAB kwisisombululo se-zinc.
2. I-Hydrothermal Reaction: Dlulisa isisombululo esixutywe kwi-50ml ye-Teflon-lined autoclave, iphendule kwi-180 ° C kwiiyure ze-12.
3. I-Post-Processing: Iyafana ne-nanoparticles.

4.3 Inkqubo yeParameter Optimization

1. Ukulawula ubushushu: 80-90 ° C kwi-nanoparticles, i-180-200 ° C ye-nanowires.
2. Ixabiso le-pH: Gcina phakathi kwe-9-11.
3. Ixesha lokuphendula: iiyure ze-4-6 ze-nanoparticles, iiyure ze-12-24 ze-nanowires.

4.4 Uhlalutyo lwezinto eziluncedo nezingeloncedo

Izinto eziluncedo:

• Ukusabela kobushushu obuphantsi, ukonga amandla
• I-morphology elawulekayo kunye nobukhulu
• Ifanelekile kwimveliso enkulu

Izinto ezingeloncedo:

• Iimveliso zinokuqulatha ukungcola
• Ifuna i-post-processing
• Umgangatho wekristale osezantsi

5. I-Molecular Beam Epitaxy (MBE) ye-ZnTe Thin Film Preparation

5.1 Umgaqo

I-MBE ikhulisa ifilimu ye-ZnTe enye-crystal ebhityileyo ngokukhokela imiqadi ye-molecular ye-Zn kunye ne-Te kwi-substrate phantsi kweemeko ze-vacuum eziphezulu, ezilawula ngokuchanekileyo umlinganiselo we-beam flux kunye nobushushu be-substrate.

5.2 Inkqubo eneenkcukacha

5.2.1 ULungiselelo lweNkqubo

1. Isixokelelwano seVacuum: Vacuum esisiseko ≤1×10⁻⁸Pa.
2. Ulungiselelo lomthombo:
   • Umthombo weZinc: I-6N i-zinc ephezulu ye-zinc kwi-crucible ye-BN.
   • Umthombo weTellurium: I-6N i-high-purity tellurium kwi-PBN crucible.
3. ULungiselelo lweSubstrate:
   • I-GaAs (100) substrate esetyenziswa ngokuqhelekileyo.
   • Ukucocwa kwesubstrate: Ukucoca isinyibilikisi se-organic → ukufakwa kweasidi → ukuhlanjululwa kwamanzi adiyoniyoni → ukomiswa kwenitrogen.

5.2.2 Inkqubo yokuKhula

1. I-Substrate Outgassing: Bhaka kwi-200 ° C ngeyure ye-1 ukususa i-adsorbates ebusweni.
2. Ukususwa kwe-Oxide: Ukufudumala kwi-580 ° C, ubambe imizuzu eyi-10 ukususa i-oxides ebusweni.
3. Ukukhula kweBuffer Layer: Kuphole ukuya kuma-300°C, khulisa i-10nm ZnTe buffer layer.
4. Ukukhula Okungundoqo:
   • Ubushushu beSubstrate: 280-320°C.
   • I-Zinc beam yoxinzelelo olulinganayo: 1×10⁻⁶Tor.
   • I-Tellurium beam yoxinzelelo olulinganayo: 2×10⁻⁶Torr.
   • Umlinganiselo we-V / III olawulwa kwi-1.5-2.0.
   • Izinga lokukhula: 0.5-1μm / h.
5. I-Annealing: Emva kokukhula, i-anneal kwi-250 ° C imizuzu engama-30.

5.2.3 Ukubeka iliso kwiSitu

1. I-RHEED Monitoring: Ukuqwalaselwa kwexesha langempela lokwakhiwa ngokutsha komhlaba kunye nemodi yokukhula.
2. I-Mass Spectrometry: Ukubeka iliso kukuqina kwe-molecular beam.
3. I-Infrared Thermometry: Ulawulo oluchanekileyo lobushushu be-substrate.

5.3 Amanqaku oLawulo lweNkqubo

1. Ulawulo lobushushu: Ubushushu be-substrate buchaphazela umgangatho wekristale kunye ne-morphology yomhlaba.
2. I-Beam Flux Ratio: Umlinganiselo we-Te / Zn uchaphazela iintlobo zesiphene kunye nokugxila.
3. Izinga lokuKhula: Amaxabiso aphantsi aphucula umgangatho wekristale.

5.4 Uhlalutyo lwezinto eziluncedo nezingeloncedo

Izinto eziluncedo:

• Ukuqulunqwa okuchanekileyo kunye nolawulo lwe-doping.
• Iifilimu ezikumgangatho ophezulu wekristale enye.
• Imiphezulu ethe tyaba yeatom iyafikeleleka.

Izinto ezingeloncedo:

• Izixhobo ezixabisa kakhulu.
• Amazinga okukhula kancinane.
• Ifuna izakhono zokusebenza eziphezulu.

6. Ezinye iindlela zokuHlanganisa

6.1 I-Chemical Vapor Deposition (CVD)

1. Abandulelayo: I-Diethylzinc (DEZn) kunye ne-diisopropyltelluride (DIPTe).
2. Ubushushu bokuphendula: 400-500°C.
3. Irhasi yeCarrier: Initrogen ecocekileyo okanye ihydrogen.
4. Uxinzelelo: Uxinzelelo lwe-atmospheric okanye oluphantsi (10-100Torr).

6.2 Ukuguquka kweThermal

1. Izinto zoMthombo: Ucoceko oluphezulu lwe-ZnTe powder.
2. Inqanaba leVacuum: ≤1×10⁻⁴Pa.
3. Ubushushu boMphunga: 1000-1100°C.
4. Ubushushu beSubstrate: 200-300°C.

7. Isiphelo

Kukho iindlela ezahlukeneyo zokwenza i-zinc telluride, nganye ineengenelo zayo kunye nokungalunganga. I-Solid-state reaction ilungele ukulungiswa kwezinto ezininzi, ukuthuthwa komphunga kuvelisa iikristale ezikumgangatho ophezulu, iindlela zesisombululo zilungele ama-nanomaterials, kwaye i-MBE isetyenziselwa iifilimu ezibhityileyo ezikumgangatho ophezulu. Izicelo ezisebenzayo kufuneka zikhethe indlela efanelekileyo esekelwe kwiimfuno, ngokulawulwa okungqongqo kweeparamitha zenkqubo ukufumana izinto eziphezulu zeZnTe. Imikhomba-ndlela yexesha elizayo ibandakanya ukuhlanganiswa kobushushu obuphantsi, ulawulo lwe-morphology, kunye nokuphucula inkqubo yedoping.