1. Ukuphumelela kuLungiselelo lweMathiriyeli ecocekileyo ePhezulu
Izinto eziSekwe kwiSilicon: Ukucoceka kwe-silicon iikristale enye iye yadlula i-13N (99.9999999999%) kusetyenziswa indlela yendawo edadayo (FZ), iphucula kakhulu ukusebenza kwezixhobo ze-semiconductor ezinamandla aphezulu (umz., ii-IGBTs) kunye neechips eziphambili45. Le teknoloji inciphisa ukungcoliswa kwe-oksijeni ngenkqubo ye-crucible-free kwaye idibanisa i-silane CVD kunye neendlela eziguqulwayo ze-Siemens ukuphumeza ukuveliswa ngokufanelekileyo kwe-polysilicon ye-zone-melting-grade 47.
Izinto ze-Germanium: Ukucocwa kokunyibilika kwendawo okuphuculweyo kuye kwaphakamisa ukucoceka kwe-germanium ukuya kwi-13N, kunye ne-coefficients yokusabalalisa ukungcola okuphuculweyo, okwenza usetyenziso kwi-infrared optics kunye ne-radiation detectors23. Nangona kunjalo, ukusebenzisana phakathi kwe-germanium etyhidiweyo kunye nezixhobo zezixhobo kumaqondo obushushu aphezulu kuhlala kungumngeni onzima 23.
2. Izinto ezintsha kwiNkqubo neZixhobo
Ulawulo lweParameter Dynamic: Uhlengahlengiso lokunyibilikisa isantya sokuhamba kwendawo, iqondo lobushushu, kunye nemeko yerhasi ekhuselayo- kudityaniswe nokujongwa kwexesha lokwenyani kunye neenkqubo zempendulo ezizenzekelayo-ziphucule uzinzo kunye nokuphinda-phinda ngelixa kuncitshiswa ukusebenzisana phakathi kwegermanium / i-silicon kunye nezixhobo27.
Ukuveliswa kwePolysilicon: Iindlela ezintsha ezinokunyuka ze-polysilicon ye-zone-melting-grade idilesi imingeni yokulawula umxholo weoksijini kwiinkqubo zemveli, ukunciphisa ukusetyenziswa kwamandla kunye nokunyusa isivuno47.
3. Ukudityaniswa kweTekhnoloji kunye nezicelo zoLuleko eziNyezo
I-Melt Crystallization Hybridization: Iindlela zokunyibilikisa zamandla asezantsi ziyadityaniswa ukuze kuphuculwe ukwahlulwa kwekhompawundi ephilayo kunye nokucoca, ukwandisa usetyenziso lokunyibilika kwendawo kumayeza aphakathi amayeza kunye neekhemikhali ezilungileyo 6.
I-Semiconductors yesiZukulwana sesithathu: Ukunyibilika kwendawo ngoku kusetyenziswe kwizinto ezibanzi-bandgap ezifana ne-silicon carbide (SiC) kunye ne-gallium nitride (GaN), exhasa i-high-frequency kunye nezixhobo eziphezulu zokushisa. Umzekelo, itekhnoloji yolwelo-yenqanaba le-crystal eyodwa yesithando somlilo yenza ukukhula okuzinzile kwekristale yeSiC ngolawulo oluchanekileyo lobushushu 15.
4. Iimeko eziDiversified Application
I-Photovoltaics: I-polysilicon ye-Zone-melting-grade isetyenziswa kwiiseli zelanga eziphezulu, ukufikelela kwi-photoelectric conversion ye-photoelectric esebenzayo ngaphezu kwe-26% kunye nokuqhubela phambili ukuqhubela phambili kumandla avuselelekayo4.
Ubuchwephesha be-Infrared kunye ne-Detector: I-Ultra-high-purity germanium yenza i-miniaturized, i-imaging ye-infrared ephezulu yokusebenza kunye nezixhobo zokujonga ebusuku zomkhosi, ukhuseleko kunye neemarike zasekuhlaleni23.
5. Imingeni kunye nezikhokelo zexesha elizayo
Imida yokuSuswa koBumdaka: Iindlela zangoku ziyasokola ukususa ubumdaka bokukhanya (umzekelo, i-boron, i-phosphorus), ifuna iinkqubo ezintsha zokusebenzisa idoping okanye ubugcisa bolawulo lwendawo enyibilikayo.
Ukuzinza kweSixhobo kunye nokuSebenza ngokuSebenza kwaMandla: Uphando lugxile ekuphuhliseni izinto ezikwaziyo ukumelana nobushushu obuphezulu, izinto ezikwaziyo ukumelana nokugqwala kunye neenkqubo zokufudumeza i-radiofrequency ukucutha ukusetyenziswa kwamandla kunye nokwandisa ixesha lokuphila kwezixhobo. Itekhnoloji yeVacuum arc remelting (VAR) ibonisa isithembiso sokucokisa intsimbi47.
Itekhnoloji yokunyibilikisa indawo ihambela phambili ekucocekeni okuphezulu, ixabiso eliphantsi, kunye nokusebenza ngokubanzi, iqinisa indima yayo njengelitye lembombo kwii-semiconductors, amandla avuselelekayo, kunye ne-optoelectronics.
Ixesha lokuposa: Mar-26-2025