1. Uphuhliso kwi-High-Purity Material Lungiselela
Izinto eziSekwe kwiSilicon: Ubunyulu beekristale zesilicon enye budlule i-13N (99.9999999999%) kusetyenziswa indlela ye-floating zone (FZ), nto leyo ephucula kakhulu ukusebenza kwezixhobo ze-semiconductor ezinamandla aphezulu (umz., ii-IGBTs) kunye neetships eziphambili45. Le teknoloji inciphisa ungcoliseko lwe-oxygen ngenkqubo engena-crucible kwaye idibanisa i-silane CVD kunye neendlela ze-Siemens ezilungisiweyo ukufezekisa imveliso efanelekileyo ye-polysilicon47 ye-zone-melting-grade.
Izixhobo zeGermanium: Ukucocwa kweendawo zokunyibilika okwenziwe ngcono kunyuse ubumsulwa begermanium ukuya kwi-13N, kunye nee-coefficients zokusasazwa kokungcola eziphuculweyo, okuvumela ukusetyenziswa kwi-infrared optics kunye ne-radiation detectors23. Nangona kunjalo, ukusebenzisana phakathi kwegermanium enyibilikisiweyo kunye nezixhobo kumaqondo obushushu aphezulu kusengumngeni obalulekileyo23.
2. Utshintsho kwiNkqubo nakwiZixhobo
Ulawulo lweParamitha oluDynamic: Uhlengahlengiso lwesantya sokuhamba kwendawo enyibilikayo, ii-gradients zobushushu, kunye neendawo ezikhuselayo zegesi—kunye nokubeka esweni ngexesha langempela kunye neenkqubo zempendulo ezenzekelayo—ziphucule uzinzo lwenkqubo kunye nokuphindaphinda ngelixa zinciphisa ukusebenzisana phakathi kwe-germanium/silicon kunye nezixhobo27.
Imveliso yePolysilicon: Iindlela ezintsha ezinokukhuliswa ze-polysilicon yezinga lokunyibilika kweendawo zijongana nemingeni yokulawula umxholo weoksijini kwiinkqubo zemveli, ukunciphisa ukusetyenziswa kwamandla kunye nokunyusa isivuno47.
3. Ukuhlanganiswa kobuChwepheshe kunye nezicelo eziNxulumeneyo
Ukunyibilikisa iCrystallization: Iindlela zokunyibilikisa icrystallization yokunyibilikisa amandla aphantsi ziyadityaniswa ukuze kuphuculwe ukwahlulwahlulwa kunye nokucocwa kwe-organic compound, kwandiswa ukusetyenziswa kokunyibilikisa indawo kwiindawo eziphakathi kwamayeza kunye neekhemikhali ezincinci.
IiSemiconductors zeSizukulwana Sesithathu: Ukunyibilika kweZone ngoku kusetyenziswa kwizinto ezibanzi ezifana ne-silicon carbide (SiC) kunye ne-gallium nitride (GaN), ezixhasa izixhobo ezisebenzisa amaza aphezulu kunye nobushushu obuphezulu. Umzekelo, iteknoloji ye-liquid-phase single-crystal furnace ivumela ukukhula okuzinzileyo kwekristale yeSiC ngolawulo lobushushu oluchanekileyo 15.
4. Iimeko zeSicelo eSihlukeneyo
I-Photovoltaics: I-polysilicon ye-Zone-melting-grade isetyenziswa kwiiseli zelanga ezisebenzayo kakhulu, ifikelela kwi-photoelectric conversion efficiency engaphezulu kwe-26% kwaye iqhubela phambili kumandla avuselelekayo.
I-Infrared kunye neTekhnoloji yeDetector: I-germanium ecocekileyo kakhulu ivumela izixhobo ze-infrared ezisebenza kakuhle kunye nezixhobo zokubona ebusuku kwiimarike zomkhosi, zokhuseleko kunye nezoluntu.
5. Imingeni kunye neendlela zexesha elizayo
Imida yokususa ukungcola: Iindlela zangoku ziyasokola ukususa ukungcola kwezinto zokukhanya (umz., i-boron, i-phosphorus), nto leyo ebangela ukuba kufuneke iinkqubo ezintsha zokusebenzisa i-doping okanye i-dynamic melt zone control technologies.
Ukuqina Kwezixhobo Nokusebenza Kakuhle Kwamandla: Uphando lugxile ekuphuhliseni izixhobo eziqhotsiweyo ezimelana nobushushu obuphezulu, ezingamelani nokugqwala kunye neenkqubo zokufudumeza nge-radiofrequency ukunciphisa ukusetyenziswa kwamandla kunye nokwandisa ixesha lokusetyenziswa kwezixhobo. Itekhnoloji yokunyibilikisa i-vacuum arc (VAR) ibonisa ithemba lokuphucula isinyithi.
Itekhnoloji yokunyibilikisa indawo iqhubela phambili ukuya kubunyulu obuphezulu, iindleko eziphantsi, kunye nokusetyenziswa ngokubanzi, iqinisa indima yayo njengelitye lembombo kwi-semiconductors, amandla avuselelekayo, kunye ne-optoelectronics
Ixesha leposi: Matshi-26-2025