Ukukhula kunye nokuCocwa kwekristale yeTellurium ye-7N

Ukukhula kunye nokuCocwa kwekristale yeTellurium ye-7N

I. Unyango lwangaphambi kokusetyenziswa kwezinto eziluhlaza kunye nokucocwa kwangaphambili

1. ‌Ukukhethwa kwezinto eziluhlaza kunye nokutyumza‌

• ‌Iimfuno zezinto eziphathekayoSebenzisa i-tellurium ore okanye i-anode slime (umxholo we-Te ≥5%), kungcono i-copper slime ye-anode slime (equlethe i-Cu₂Te, i-Cu₂Se) njengezinto eziluhlaza.
• ‌Inkqubo Yonyango Lwangaphambi Konyango‌:
• Ukutyumza okurhabaxa ukuya kubukhulu besuntswana ≤5mm, kulandele ukugaywa kwebhola ukuya kwi-≤200 mesh;
• Ukwahlulwa kwemagnethi (ubunzulu bentsimi yemagnethi ≥0.8T) ukususa iFe, iNi, kunye nezinye izinto ezingcolisayo zemagnethi;
• Ukuqubha kolwelo (pH=8-9, abaqokeleli be-xanthate) ukuze kwahlulwe i-SiO₂, i-CuO, kunye nezinye izinto ezingcolisayo ezingezizo zemagnethi.
• ‌Ukulumkela‌: Kuphephe ukufaka umswakama ngexesha lonyango olumanzi ngaphambi kokulotywa (kufuneka komiswe ngaphambi kokuba kurostiwe); lawula umswakama ongqongileyo ≤30%.

1. ‌Ukuroa kunye nokuOxidation kwiPyrometallurgical‌

• ‌Iiparameter zeNkqubo‌:
• Ubushushu bokugcada nge-oxidation: 350–600°C (ulawulo olucwangcisiweyo: ubushushu obuphantsi bokususa i-sulfurization, ubushushu obuphezulu bokugcada);
• Ixesha lokuyosa: iiyure ezi-6–8, kunye nesantya sokuhamba kwe-O₂ se-5–10 L/min;
• I-Reagent: I-asidi yesulfuric exineneyo (98% H₂SO₄), umlinganiselo wobunzima Te₂SO₄ = 1:1.5 .
• ‌Impendulo yeKhemikhali‌:
  Cu2Te+2O2+2H2SO4→2CuSO4+TeO2+2H2OCu2Te+2O2+2H2 SO4​→2CuSO4+TeO2+2H2O
• ‌Ukulumkela‌: Lawula ubushushu obungaphezulu kwama-600°C ukuthintela ukuwohloka kwe-TeO₂ (iqondo lokubila elingama-387°C); nyanga igesi yokukhupha umoya nge-NaOH scrubbers.

II. Ukucoca nge-Electrorefining kunye ne-Vacuum Distillation

1. ‌Ukucoca ngombane‌

• ‌Inkqubo ye-Electrolyte‌:
• Ukwakheka kwe-Electrolyte: H₂SO₄ (80–120g/L), TeO₂ (40–60g/L), isongezo (igelatin 0.1–0.3g/L);
• Ulawulo lobushushu: 30–40°C, izinga lokuhamba kokujikeleza kwegazi yi-1.5–2 m³/h.
• ‌Iiparameter zeNkqubo‌:
• Uxinano lwangoku: 100–150 A/m², i-voltage yeseli 0.2–0.4V;
• Isithuba se-electrode: 80–120mm, ubukhulu be-cathode deposition yi-2–3mm/8h;
• Ukusebenza kakuhle kokususa ukungcola: Cu ≤5ppm, Pb ≤1ppm.
• ‌Ukulumkela‌: Hluza i-electrolyte rhoqo (ukuchaneka ≤1μm); sula imiphezulu ye-anode ngoomatshini ukuthintela ukudlula.

1. ‌Ukucoca ngeVacuum‌

• ‌Iiparameter zeNkqubo‌:
• Inqanaba le-vacuum: ≤1×10⁻²Pa, ubushushu bokunyibilikisa i-distillation buyi-600–650°C;
• Ubushushu bendawo yeCondenser: 200–250°C, Ukusebenza kakuhle kokufuma komphunga weTe ≥95%;
• Ixesha lokunyibilikisa: iiyure eziyi-8–12, umthamo webhetshi enye ≤50kg.
• ‌Ukusasazwa kokungcola‌: Ukungcola okubilayo kancinci (Se, S) kuqokeleleka ngaphambili kwi-condenser; ukungcola okubilayo kakhulu (Pb, Ag) kuhlala kwiintsalela.
• ‌Ukulumkela‌: Inkqubo yokufunxa i-vacuum ngaphambi kokuyipompa ukuya kwi-≤5×10⁻³Pa ngaphambi kokuyifudumeza ukuthintela i-Te oxidation.

‌III. Ukukhula kwekristale (Ukwenziwa kwekristale ngendlela ethile)‌

1. ‌Uqwalaselo lwezixhobo‌

• ‌Iimodeli zeSithando soKhula ngeCrystal‌: TDR-70A/B (umthamo we-30kg) okanye i-TRDL-800 (umthamo we-60kg);
• Izinto ezisetyenziswa ekutshiseni: I-graphite ecocekileyo kakhulu (umxholo wothuthu ≤5ppm), ubukhulu Φ300×400mm;
• Indlela yokufudumeza: Ukufudumeza okumelana neGraphite, ubushushu obuphezulu yi-1200°C.

1. ‌Iiparameter zeNkqubo‌

• ‌Ulawulo lokunyibilika‌:
• Ubushushu bokunyibilika: 500–520°C, ubunzulu bedama lokunyibilika yi-80–120mm;
• Igesi ekhuselayo: Ar (ubumsulwa ≥99.999%), izinga lokuhamba kwamanzi yi-10–15 L/min.
• ‌Iiparameters zeCrystallization‌:
• Izinga lokutsala: 1–3mm/h, isantya sokujikeleza kwekristale yi-8–12rpm;
• I-gradient yobushushu: I-Axial 30–50°C/cm, i-radial ≤10°C/cm;
• Indlela yokuphola: Isiseko sobhedu esipholiswe ngamanzi (ubushushu bamanzi buyi-20–25°C), ukupholisa okuphezulu okukhazimlayo.

1. ‌Ulawulo lokungacoceki‌

• ‌Isiphumo Sokwahlulwahlulwa‌: Ukungcola okufana neFe, Ni (i-segregation coefficient <0.1) kuqokelelana kwimida yeenkozo;
• ‌Imijikelo yokunyibilikisa‌: imijikelo emi-3–5, ukungcola okupheleleyo okupheleleyo ≤0.1ppm.

1. ‌Ukulumkela‌:

• Gquma umphezulu onyibilikisiweyo ngeepleyiti zegrafiti ukuze ucinezele ukuguquguquka kweTe (izinga lokulahleka ≤0.5%);
• Jonga ububanzi bekristale ngexesha langempela usebenzisa iigeyiji zelaser (ukuchaneka ± 0.1mm);
• Kuphephe ukuguquguquka kwamaqondo obushushu >±2°C ukuthintela ukwanda koxinano lwe-dislocation (target ≤10³/cm²).

IV. Uhlolo loMgangatho kunye neeMetriki eziPhambili

‌V. Iinkqubo zoKhuseleko lweNdalo

1. ‌Unyango lwegesi yokukhupha umoya‌:

• Ukukhupha umoya ophumayo: Nciphisa i-SO₂ kunye ne-SeO₂ ngee-scrubbers ze-NaOH (pH≥10);
• Umphunga we-vacuum distillation: Yima uze ubuyisele umphunga we-Te; iigesi eziseleyo ezifunxwa nge-activated carbon.

1. ‌Ukuphinda kusetyenziswe iSlag‌:

• I-Anode slime (equlethe i-Ag, i-Au): Buyisela kwi-hydrometallurgy (inkqubo ye-H₂SO₄-HCl);
• Iintsalela ze-Electrolysis (eziqulethe i-Pb, i-Cu): Buyela kwiinkqubo zokunyibilikisa ubhedu.

1. ‌Amanyathelo oKhuseleko‌:

• Abaqhubi kufuneka banxibe iimaski zegesi (Umphunga unetyhefu); bagcine umoya ungenaxinzelelo (izinga lokutshintshiselana komoya ≥10 imijikelo/iyure).

Izikhokelo zoLungiso lweNkqubo

1. ‌Uhlengahlengiso lwezinto eziluhlaza‌: Lungisa ubushushu bokurosa kunye nomlinganiselo we-asidi ngokuguquguqukayo ngokusekelwe kwimithombo ye-anode slime (umz., ukunyibilikisa ithusi vs. i-lead);
2. ‌Ukulinganisa Amanqanaba Okutsala Ngekristale‌: Lungisa isantya sokutsala ngokwendlela yokunyibilikisa (inombolo kaReynolds Re≥2000) ukuze kuthintelwe ukupholisa ngamandla;
3. ‌Ukusebenza kakuhle kwamandlaSebenzisa ukufudumeza indawo yobushushu obuphindwe kabini (indawo ephambili engama-500°C, indawo engaphantsi engama-400°C) ukunciphisa ukusetyenziswa kwamandla okumelana negrafiti ngama-30%.